| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.17 Ω |
| Polarity | N-Channel |
| Power Dissipation | 208 W |
| Threshold Voltage | 2.5 V |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 20.2A |
| Input Capacitance (Ciss) | 2950pF @25V(Vds) |
| Input Power (Max) | 208 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 208W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 4.83 mm |
| Size-Height | 16.51 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FCP190N60 is a N-channel SuperFET® II high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
● Ultra low gate charge (Qg = 57nC)
● Low effective output capacitance (Coss.eff = 160pF)
● 100% avalanche tested
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