| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 11.0 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.32 Ω |
| Polarity | N-Channel |
| Power Dissipation | 36 W |
| Threshold Voltage | 5 V |
| Input Capacitance | 1.15 nF |
| Gate Charge | 40.0 nC |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 650 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 11.0 A |
| Rise Time | 98 ns |
| Input Capacitance (Ciss) | 1490pF @25V(Vds) |
| Input Power (Max) | 36 W |
| Fall Time | 56 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 36W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Rail |
| Size-Length | 10.16 mm |
| Size-Width | 4.7 mm |
| Size-Height | 9.19 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The FCPF11N60 is a 600V N-channel SuperFET® high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
● Ultra low gate charge (Qg = 40nC)
● Low effective output capacitance (Coss.eff = 95pF)
● 100% avalanche tested
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