| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 0.255 Ω |
| Polarity | N-Channel |
| Power Dissipation | 32.1 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Continuous Drain Current (Ids) | 10.8A |
| Rise Time | 9.1 ns |
| Input Capacitance (Ciss) | 1505pF @100V(Vds) |
| Input Power (Max) | 32.1 W |
| Fall Time | 10 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 32.1W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.16 mm |
| Size-Width | 4.7 mm |
| Size-Height | 16.07 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Description
●The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs,employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
●Features
●•RDS(on) = 0.255Ω( Typ.)@ VGS= 10V, ID= 5.4A
●• Ultra Low Gate Charge ( Typ. Qg = 27.4nC)
●• Low Effective Output Capacitance
●• 100% Avalanche Tested
●• RoHS Compliant
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