| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Drain to Source Resistance (on) (Rds) | 260 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 37.9 W |
| Input Capacitance | 2.25 nF |
| Gate Charge | 70.0 nC |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 16.0 A |
| Rise Time | 130 ns |
| Input Capacitance (Ciss) | 2250pF @25V(Vds) |
| Input Power (Max) | 37.9 W |
| Fall Time | 90 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 37.9W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 10.1 mm |
| Size-Width | 4.7 mm |
| Size-Height | 9.4 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Description
●SuperFET™ is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system
●miniaturization and higher efficiency.
●Features
●• 650V @TJ = 150°C
●• Typ. Rds(on)=0.22:
●• Ultra low gate charge (typ. Qg=45nC)
●• Low effective output capacitance (typ. Coss.eff=110pF)
●• 100% avalanche tested
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