TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Drain to Source Resistance (on) (Rds) | 0.32 Ω |
Polarity | N-Channel |
Power Dissipation | 31 W |
Threshold Voltage | 2.5 V |
Drain to Source Voltage (Vds) | 600 V |
Continuous Drain Current (Ids) | 10.2A |
Rise Time | 9 ns |
Input Capacitance (Ciss) | 1770pF @25V(Vds) |
Input Power (Max) | 31 W |
Fall Time | 10 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 31W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.36 mm |
Size-Width | 4.9 mm |
Size-Height | 9.19 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FCPF380N60E is a N-channel SuperFET® II easy-drive high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
● Ultra low gate charge (Qg = 34nC)
● Low effective output capacitance (Coss.eff = 97pF)
● 100% avalanche tested
Fairchild
10 Pages / 0.28 MByte
Fairchild
12 Pages / 0.78 MByte
Fairchild
FAIRCHILD SEMICONDUCTOR FCPF380N60 Power MOSFET, N Channel, 10.2A, 600V, 0.33Ω, 10V, 2.5V
ON Semiconductor
Trans MOSFET N-CH 600V 10.2A 3Pin(3+Tab) TO-220F Tube
Fairchild
FAIRCHILD SEMICONDUCTOR FCPF380N60E Power MOSFET, N Channel, 10.2A, 600V, 0.32Ω, 10V, 2.5V
ON Semiconductor
MOSFET N-CH 600V TO-220-3
Fairchild
Trans MOSFET N-CH 600V 10.2A 3Pin TO-220F Tube
Fairchild
Trans MOSFET N-CH 600V 10.2A 3Pin(3+Tab) TO-220F Tube
Fairchild
DESIGN/PROCESS CHANGE NOTIFICATION
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