| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.34 Ω |
| Power Dissipation | 35.7 W |
| Threshold Voltage | 4.5 V |
| Input Capacitance | 1770 pF |
| Drain to Source Voltage (Vds) | 800 V |
| Rise Time | 12 ns |
| Input Capacitance (Ciss) | 1770pF @100V(Vds) |
| Fall Time | 2.6 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 35700 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.36 mm |
| Size-Width | 4.9 mm |
| Size-Height | 16.07 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The FCPF400N80Z is a N-channel SuperFET® II high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
● Ultra low gate charge (Qg = 43nC)
● Low effective output capacitance (Coss.eff = 138pF)
● 100% avalanche tested
ON Semiconductor
9 Pages / 0.7 MByte
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FAIRCHILD SEMICONDUCTOR FCPF400N80Z Power MOSFET, N Channel, 11A, 800V, 0.34Ω, 10V, 4.5V
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ON Semiconductor
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