| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 500 V |
| Current Rating | 16.5 A |
| Case/Package | TO-3-3 |
| Drain to Source Resistance (on) (Rds) | 380 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 205W (Tc) |
| Input Capacitance | 1.94 nF |
| Gate Charge | 45.0 nC |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 16.5 A |
| Rise Time | 150 ns |
| Input Capacitance (Ciss) | 1945pF @25V(Vds) |
| Input Power (Max) | 205 W |
| Power Dissipation (Max) | 205W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.
●This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
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