TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 500 V |
Current Rating | 48.0 A |
Case/Package | TO-3-3 |
Power Rating | 625 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.089 Ω |
Polarity | N-Channel |
Power Dissipation | 625 W |
Threshold Voltage | 5 V |
Input Capacitance | 4.98 nF |
Gate Charge | 105 nC |
Drain to Source Voltage (Vds) | 500 V |
Breakdown Voltage (Drain to Source) | 500 V |
Continuous Drain Current (Ids) | 48.0 A |
Rise Time | 360 ns |
Input Capacitance (Ciss) | 6460pF @25V(Vds) |
Input Power (Max) | 625 W |
Fall Time | 230 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 625W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 15.6 mm |
Size-Width | 4.8 mm |
Size-Height | 19.9 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDA50N50 is an UniFET™ N-channel MOSFET produced using Fairchild Semiconductor"s high voltage planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
● Improved dV/dt capability
● 105nC Typical low gate charge
● 45pF Typical low Crss
● 100% Avalanche tested
Fairchild
10 Pages / 1.16 MByte
Fairchild
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