| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0045 Ω |
| Power Dissipation | 310 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 75 V |
| Rise Time | 88 ns |
| Input Capacitance (Ciss) | 6600pF @25V(Vds) |
| Input Power (Max) | 310 W |
| Fall Time | 45 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 310 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.67 mm |
| Size-Width | 11.33 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 175℃ |
The FDB045AN08A0 is a N-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It is suitable for use in synchronous rectification for ATX/server/telecom PSU and battery protection circuit.
● Low miller charge
● Low Qrr body diode
● UIS Capability (single pulse and repetitive pulse)
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