FDB3632 Datasheet PDF - ON Semiconductor

Manufacturer:	ON Semiconductor
Category:	MOSFETs
Case Package:	TO-263-3
Description:	MOSFET Transistor, N Channel, 80A, 100V, 9mohm, 10V, 4V
Documentation:	FDB3632 Datasheet (14 Pages)Package Outline Dimension on11 Page 12 Page 13 Page Part Numbering System on2 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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FDB3632 Specifications

TYPE	DESCRIPTION
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	9 mΩ
Power Dissipation	310 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	100 V
Rise Time	39 ns
Input Capacitance (Ciss)	6000pF @25V(Vds)
Input Power (Max)	310 W
Fall Time	46 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	310000 mW