TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 100 V |
Current Rating | 61.0 A |
Case/Package | TO-263-3 |
Drain to Source Resistance (on) (Rds) | 0.014 Ω |
Polarity | N-Channel |
Power Dissipation | 150 W |
Threshold Voltage | 4 V |
Input Capacitance | 2.88 nF |
Gate Charge | 41.0 nC |
Drain to Source Voltage (Vds) | 100 V |
Breakdown Voltage (Drain to Source) | 100 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 61.0 A |
Rise Time | 85 ns |
Input Capacitance (Ciss) | 2880pF @25V(Vds) |
Input Power (Max) | 150 W |
Fall Time | 45 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 150W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Tape & Reel (TR) |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The FDB3652 is a N-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It is suitable for use in synchronous rectification for ATX/server/telecom PSU, battery protection circuit and micro solar inverter.
● Low miller charge
● Low Qrr body diode
● UIS Capability (single pulse and repetitive pulse)
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13 Pages / 0.57 MByte
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7 Pages / 0.87 MByte
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