| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 30.0 V |
| Case/Package | TO-263-3 |
| Drain to Source Resistance (on) (Rds) | 5.20 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 68 W |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 80.0 A |
| Rise Time | 13 ns |
| Input Capacitance (Ciss) | 2440pF @15V(Vds) |
| Input Power (Max) | 68 W |
| Fall Time | 15 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 68W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape & Reel (TR) |
| Size-Height | 4.83 mm |
| Operating Temperature | -65℃ ~ 175℃ (TJ) |
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
●These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
●The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
●Product Highlights
●80 A, 30 V.
●R
●DS(ON)
●= 6.5 m
●W
●@ V
●GS
●=10 V
●R
●DS(ON)
●= 8.5 m
●W
●@ V
●GS
●= 4.5 V
Fairchild
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