TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-263-3 |
Number of Positions | 2 Position |
Drain to Source Resistance (on) (Rds) | 0.0085 Ω |
Power Dissipation | 60 W |
Threshold Voltage | 1.9 V |
Drain to Source Voltage (Vds) | 40 V |
Rise Time | 6 ns |
Input Capacitance (Ciss) | 1970pF @20V(Vds) |
Input Power (Max) | 3.1 W |
Fall Time | 4 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 60 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 10.67 mm |
Size-Width | 11.33 mm |
Size-Height | 4.83 mm |
The FDB8447L is a N-channel MOSFET produced using Fairchild Semiconductor"s proprietary PowerTrench® technology to deliver low RDS (ON) and optimized BVDSS capability to offer superior performance benefit in the application.
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