TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 6 Pin |
Case/Package | TSOT-23-6 |
Number of Positions | 6 Position |
Drain to Source Resistance (on) (Rds) | 0.035 Ω |
Power Dissipation | 1.6 W |
Drain to Source Voltage (Vds) | 20 V |
Rise Time | 11 ns |
Input Capacitance (Ciss) | 1456pF @10V(Vds) |
Input Power (Max) | 800 mW |
Fall Time | 37 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1.6W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 3 mm |
Size-Width | 1.7 mm |
Size-Height | 1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDC602P is a 2.5V specified P-channel MOSFET uses a rugged gate version of Fairchild"s advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 to 12V). It is suitable for use in battery management, load switch and battery protection applications.
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
ON Semiconductor
7 Pages / 0.15 MByte
ON Semiconductor
5 Pages / 0.06 MByte
Fairchild
P-Channel 2.5V Specified PowerTrench MOSFET
Fairchild
FAIRCHILD SEMICONDUCTOR FDC602P MOSFET Transistor, P Channel, 5.5A, -20V, 35mohm, -4.5V, -900mV
ON Semiconductor
MOSFET P-CH 20V 5.5A SSOT-6
Fairchild
Trans MOSFET N/P-CH 20V 5.9A/4.2A 6Pin SuperSOT T/R
Fairchild
Trans MOSFET N/P-CH 20V 5.9A/4.2A 6Pin SSOT FLMP T/R
Fairchild
MOSFET P-CH 20V 5.5A 6SSOT
ON Semiconductor
MOSFET P-CH 20V 5.5A 6SSOT
ON Semiconductor
Trans MOSFET N/P-CH 20V 5.9A/4.2A 6-Pin SuperSOT T/R
ON Semiconductor
TRANSISTOR, MOSFET, PAIR, COMPLEMENTARY, 20V V(BR)DSS, 5.9A I(D), SOT-363var
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.