| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | TSOT-23-6 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.026 Ω |
| Power Dissipation | 1.6 W |
| Drain to Source Voltage (Vds) | 12 V |
| Rise Time | 10 ns |
| Input Capacitance (Ciss) | 1699pF @6V(Vds) |
| Input Power (Max) | 800 mW |
| Fall Time | 70 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.6 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3 mm |
| Size-Width | 1.7 mm |
| Size-Height | 1 mm |
The FDC606P is a 1.8V specified P-channel MOSFET uses Fairchild"s low voltage PowerTrench® process. It has been optimized for battery power management, load switch and battery protection applications.
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
ON Semiconductor
5 Pages / 0.21 MByte
ON Semiconductor
8 Pages / 0.09 MByte
ON Semiconductor
5 Pages / 0.2 MByte
ON Semiconductor
15 Pages / 0.57 MByte
Fairchild
FAIRCHILD SEMICONDUCTOR FDC606P MOSFET Transistor, P Channel, 6A, -12V, 26mohm, -4.5V, -500mV
ON Semiconductor
MOSFET Transistor, P Channel, 6A, -12V, 26mohm, -4.5V, -500mV
Fairchild
P-Channel 1.8V Specified PowerTrench MOSFET
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