| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | TSOT-23-6 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.08 Ω |
| Power Dissipation | 0.96 W |
| Threshold Voltage | 900 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Rise Time | 8.5 ns |
| Input Capacitance (Ciss) | 310pF @10V(Vds) |
| Input Power (Max) | 700 mW |
| Fall Time | 3 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 960 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3 mm |
| Size-Width | 1.7 mm |
| Size-Height | 1 mm |
The FDC6305N is a dual N-channel low threshold MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance. It is suitable for use with load switch, DC-to-DC converters and motor driving applications.
● Low gate charge
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
● Small footprint
● Low profile
ON Semiconductor
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7 Pages / 0.18 MByte
ON Semiconductor
5 Pages / 0.07 MByte
ON Semiconductor
15 Pages / 0.57 MByte
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FAIRCHILD SEMICONDUCTOR FDC6305N Dual MOSFET, Dual N Channel, 2.7A, 20V, 80mohm, 4.5V, 900mV
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Dual N-Channel 2.5V Specified PowerTrench MOSFET
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