| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | TSOT-23-6 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.09 Ω |
| Power Dissipation | 0.96 W |
| Threshold Voltage | 700 mV |
| Drain to Source Voltage (Vds) | 12 V |
| Rise Time | 14 ns |
| Input Capacitance (Ciss) | 455pF @6V(Vds) |
| Input Power (Max) | 700 mW |
| Fall Time | 17 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 960 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3 mm |
| Size-Width | 1.7 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The FDC6318P is a dual P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance.
● High performance Trench technology for extremely low RDS (ON)
● Small footprint
● Low profile
● ±8V Gate to source voltage
● -2.5A Continuous drain/output current
● -7A Pulsed drain/output current
ON Semiconductor
5 Pages / 0.15 MByte
ON Semiconductor
8 Pages / 0.09 MByte
ON Semiconductor
5 Pages / 0.16 MByte
Fairchild
Dual P-Channel 1.8V PowerTrench Specified MOSFET
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FAIRCHILD SEMICONDUCTOR FDC6318P Dual MOSFET, Dual P Channel, 2.5A, -12V, 90mohm, -4.5V, 700mV
ON Semiconductor
Trans MOSFET P-CH 12V 2.5A 6Pin SuperSOT T/R
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