| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | 20.0 V |
| Current Rating | 3.00 A |
| Case/Package | TSOT-23-6 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 70 mΩ |
| Polarity | N-Channel, Dual N-Channel |
| Power Dissipation | 960 mW |
| Threshold Voltage | 900 mV |
| Input Capacitance | 324 pF |
| Gate Charge | 3.30 nC |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | 20.0 V |
| Breakdown Voltage (Gate to Source) | ±12.0 V |
| Continuous Drain Current (Ids) | 3.00 A |
| Rise Time | 7 ns |
| Input Capacitance (Ciss) | 324pF @10V(Vds) |
| Input Power (Max) | 700 mW |
| Fall Time | 1.6 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 0.96 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3 mm |
| Size-Width | 1.7 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The FDC6401N is a dual N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast switching speed. The device is suitable for use with DC-to-DC converters and battery protected applications.
● Low gate charge
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
● ±12V Gate to source voltage
● 3A Continuous drain/output current
● 12A Pulsed drain/output current
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