| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | TSOT-23-6 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.039 Ω |
| Power Dissipation | 1.6 W |
| Drain to Source Voltage (Vds) | 20 V |
| Rise Time | 9 ns |
| Input Capacitance (Ciss) | 890pF @10V(Vds) |
| Input Power (Max) | 800 mW |
| Fall Time | 13 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.6 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3 mm |
| Size-Width | 1.7 mm |
| Size-Height | 1 mm |
The FDC640P is a 2.5V specified P-channel MOSFET uses a rugged gate version of Fairchild"s advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 to 12V).
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
ON Semiconductor
5 Pages / 0.07 MByte
ON Semiconductor
7 Pages / 0.17 MByte
ON Semiconductor
5 Pages / 0.07 MByte
Fairchild
FAIRCHILD SEMICONDUCTOR FDC640P MOSFET Transistor, P Channel, 4.5A, -20V, 0.039Ω, 4.5V, 1V
Fairchild
FAIRCHILD SEMICONDUCTOR FDC6401N Dual MOSFET, Dual N Channel, 3A, 20V, 0.05Ω, 4.5V, 900mV
ON Semiconductor
Trans MOSFET N-CH 20V 3A 6Pin SuperSOT T/R
ON Semiconductor
P-Channel PowerTrench® MOSFET, 2.5V specified, -20V, -4.5A, 53mΩ, 3000-REEL
Fairchild
MOSFET Dual N-Ch 2.5V PowerTrench MOSFET
Fairchild
MOSFET P-CH 20V 4.5A 6-SSOT
ON Semiconductor
MOSFET P-CH 20V 4.5A 6-SSOT
Fairchild
Fdc640p P-channel 2.5V Powertrench Specified Mosfet
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
