TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 6 Pin |
Voltage Rating (DC) | 30.0 V |
Current Rating | 5.00 A |
Case/Package | TSOT-23-6 |
Number of Positions | 6 Position |
Drain to Source Resistance (on) (Rds) | 35 mΩ |
Polarity | N-Channel |
Power Dissipation | 1.6 W |
Threshold Voltage | 1.7 V |
Input Capacitance | 350 pF |
Gate Charge | 12.0 nC |
Drain to Source Voltage (Vds) | 30 V |
Breakdown Voltage (Drain to Source) | 30.0 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 5.00 A |
Rise Time | 12 ns |
Input Capacitance (Ciss) | 350pF @15V(Vds) |
Input Power (Max) | 800 mW |
Fall Time | 6 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1.6W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 3 mm |
Size-Width | 1.7 mm |
Size-Height | 1 mm |
Operating Temperature | -55℃ ~ 150℃ |
The FDC653N is a N-channel enhancement-mode Power FET produced using Fairchild"s proprietary high cell density DMOS technology. This very high density process is tailored to minimize ON-state resistance. It is particularly suited for low voltage applications in PCMICA cards and other battery powered circuits where fast switching and low in-line power loss are needed in a very small outline surface-mount package.
● High density cell design for extremely low RDS (ON)
● Exceptional ON-resistance and maximum DC current capability
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