| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 6.30 A |
| Case/Package | TSOT-23-6 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.021 Ω |
| Polarity | N-Channel |
| Power Dissipation | 1.6 W |
| Threshold Voltage | 1.9 V |
| Input Capacitance | 570 pF |
| Gate Charge | 10.0 nC |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 6.30 A |
| Rise Time | 4 ns |
| Input Capacitance (Ciss) | 570pF @15V(Vds) |
| Input Power (Max) | 800 mW |
| Fall Time | 3 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.6 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3 mm |
| Size-Width | 1.7 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDC655BN is a logic level single N-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimized ON-state resistance and yet maintain superior switching performance. It is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
● Fast switching
● Low gate charge
● High performance Trench technology for extremely low RDS (ON)
Fairchild
7 Pages / 0.52 MByte
Fairchild
7 Pages / 0.52 MByte
Fairchild
1 Pages / 0.04 MByte
Fairchild
4 Pages / 0.17 MByte
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FAIRCHILD SEMICONDUCTOR FDC655BN MOSFET Transistor, N Channel, 6.3A, 30V, 0.021Ω, 10V, 1.9V
ON Semiconductor
MOSFET Transistor, N Channel, 6.3A, 30V, 0.021Ω, 10V, 1.9V
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MOSFET N-CH 30V 6.3A 6-SSOT
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