TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 6 Pin |
Case/Package | TSOT-23-6 |
Number of Positions | 6 Position |
Drain to Source Resistance (on) (Rds) | 0.082 Ω |
Power Dissipation | 960 mW |
Threshold Voltage | 1.8 V |
Drain to Source Voltage (Vds) | 30 V |
Rise Time | 10 ns |
Input Capacitance (Ciss) | 220pF @15V(Vds) |
Input Power (Max) | 700 mW |
Fall Time | 2 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 960 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 3 mm |
Size-Width | 1.7 mm |
Size-Height | 1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDC6561AN is a dual N-channel logic level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited for all applications where small size is desirable but especially DC-to-DC conversion in battery powered systems.
● Low gate charge
● Very fast switching
● Small footprint
● Low profile
ON Semiconductor
5 Pages / 0.11 MByte
Fairchild
Dual N-Channel Logic Level PowerTrenchTM MOSFET
Fairchild
FAIRCHILD SEMICONDUCTOR FDC6561AN Dual MOSFET, Dual N Channel, 2.5A, 30V, 0.082Ω, 10V, 1.8V
ON Semiconductor
MOSFET 2N-CH 30V 2.5A SSOT6
Fairchild
Dual N-Channel Logic Level PowerTrench MOSFET
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