| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | TSOT-23-6 |
| Power Rating | 1.6 W |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.044 Ω |
| Polarity | P-Channel |
| Power Dissipation | 1.6 W |
| Threshold Voltage | 1.8 V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Gate to Source) | ±25.0 V |
| Continuous Drain Current (Ids) | 4.00 mA |
| Rise Time | 12 ns |
| Input Capacitance (Ciss) | 470pF @15V(Vds) |
| Input Power (Max) | 800 mW |
| Fall Time | 6 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.6 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3 mm |
| Size-Width | 1.7 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDC658AP is a logic level single P-channel MOSFET produced using Fairchild"s advanced PowerTrench® process. It has been optimized for battery power management, load switch and DC-to-DC conversion applications.
● Low gate charge
● High performance Trench technology for extremely low RDS (ON)
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