| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | TSOT-23-6 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.0207 Ω |
| Polarity | N-Channel |
| Power Dissipation | 1.6 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 6.1A |
| Rise Time | 2 ns |
| Input Capacitance (Ciss) | 655pF @15V(Vds) |
| Input Power (Max) | 800 mW |
| Fall Time | 2 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.6W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3 mm |
| Size-Width | 1.7 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDC855N is a logic level single N-channel MOSFET produced utilizing Fairchild Semiconductor"s advanced PowerTrench® process. It is an efficient solution for low voltage and battery powered applications. It possesses minimized ON-state resistance to optimize the power consumption and ideal for applications where in-line power loss is critical.
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FAIRCHILD SEMICONDUCTOR FDC855N MOSFET Transistor, N Channel, 6.1A, 30V, 0.0207Ω, 10V, 2V
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MOSFET Transistor, N Channel, 6.1A, 30V, 0.0207Ω, 10V, 2V
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