| TYPE | DESCRIPTION |
|---|
| Number of Pins | 6 Pin |
| Case/Package | TSOT-23-6 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.086 Ω |
| Power Dissipation | 1.6 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 100 V |
| Rise Time | 1.3 ns |
| Input Capacitance (Ciss) | 155pF @50V(Vds) |
| Input Power (Max) | 800 mW |
| Fall Time | 2 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1600 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
The FDC8601 is a N-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It is suitable for use in load switch, synchronous rectifier and primary switch applications.
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability in a widely used surface-mount package
● Fast switching speed
● 100% UIL tested
ON Semiconductor
7 Pages / 0.29 MByte
ON Semiconductor
2 Pages / 0.53 MByte
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