| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0094 Ω |
| Power Dissipation | 135 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 60 V |
| Rise Time | 79 ns |
| Input Capacitance (Ciss) | 1840pF @25V(Vds) |
| Input Power (Max) | 135 W |
| Fall Time | 32 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 135000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
The FDD10AN06A0 is a N-channel MOSFET produced using Fairchild Semiconductor"s PowerTrench® process. It has been designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher reliability and system efficiency.
● Low miller charge
● Low Qrr body diode
● UIS Capability (single pulse and repetitive pulse)
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