| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -15.0 A |
| Case/Package | TO-252-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 100 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 42 W |
| Input Capacitance | 759 pF |
| Gate Charge | 15.0 nC |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | -15.0 A |
| Rise Time | 10 ns |
| Input Capacitance (Ciss) | 759pF @30V(Vds) |
| Input Power (Max) | 1.6 W |
| Fall Time | 12 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.8W (Ta), 42W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The FDD5614P is a P-channel MOSFET uses high voltage PowerTrench® process, fast switching speed, high performance trench technology for extremely low RDS (ON).
● High power and current handling capability
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