| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.023 Ω |
| Power Dissipation | 3.2 W |
| Threshold Voltage | 2.5 V |
| Drain to Source Voltage (Vds) | 60 V |
| Rise Time | 9 ns |
| Input Capacitance (Ciss) | 1110pF @25V(Vds) |
| Input Power (Max) | 1.3 W |
| Fall Time | 10 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 50 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
The FDD5690 is a N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency.
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
● 23nC Typical low gate charge
ON Semiconductor
5 Pages / 0.16 MByte
ON Semiconductor
17 Pages / 0.52 MByte
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