| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 28 mΩ |
| Power Dissipation | 28 W |
| Threshold Voltage | 1.7 V |
| Drain to Source Voltage (Vds) | 30 V |
| Rise Time | 8 ns |
| Input Capacitance (Ciss) | 462pF @15V(Vds) |
| Input Power (Max) | 1.3 W |
| Fall Time | 13 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 28 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 175℃ |
The FDD6630A is a N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast switching speed.
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
● 5nC Typical low gate charge
ON Semiconductor
7 Pages / 0.32 MByte
ON Semiconductor
1 Pages / 0.15 MByte
ON Semiconductor
7 Pages / 0.87 MByte
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