| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 76.0 A |
| Case/Package | TO-252-3 |
| Polarity | N-Channel |
| Power Dissipation | 70W (Ta) |
| Input Capacitance | 1.58 nF |
| Gate Charge | 29.0 nC |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Continuous Drain Current (Ids) | 76.0 A |
| Rise Time | 12.0 ns |
| Input Capacitance (Ciss) | 1580pF @15V(Vds) |
| Input Power (Max) | 1.3 W |
| Power Dissipation (Max) | 70W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
General Description
●The FDD6670AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6670AS includes a patented combination of a MOSFET monolithically integrated with a schottky diode. The performance of the FDD6670AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6670A in parallel with a Schottky diode.
●Features
●• 76 A, 30 V RDS(ON)max= 8.0 mΩ@ VGS= 10 V
● RDS(ON)max= 10.4 mΩ@ VGS= 4.5 V
●• Includes SyncFET Schottky body diode
●• Low gate charge (29nC typical)
●• High performance trench technology for extremely low RDS(ON)
●• High power and current handling capability
●.
●Applications
●• DC/DC converter
●• Low side notebook
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