TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -30.0 V |
Current Rating | -40.0 A |
Case/Package | TO-252-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.014 Ω |
Polarity | P-Channel |
Power Dissipation | 52 W |
Input Capacitance | 1.71 nF |
Gate Charge | 17.0 nC |
Drain to Source Voltage (Vds) | 30 V |
Breakdown Voltage (Gate to Source) | ±25.0 V |
Continuous Drain Current (Ids) | -40.0 A |
Rise Time | 11 ns |
Input Capacitance (Ciss) | 1715pF @15V(Vds) |
Input Power (Max) | 1.6 W |
Fall Time | 21 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 52W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 6.73 mm |
Size-Width | 6.22 mm |
Size-Height | 2.39 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The FDD6685 is a P-channel MOSFET is a rugged gate version of advanced PowerTrench® process, fast switching speed and high performance trench technology for extremely low RDS(ON).
● Fast switching
● ±20V Gate-source voltage
● High power and current handling capability
● AEC-Q101 Qualified
Fairchild
6 Pages / 0.16 MByte
Fairchild
6 Pages / 0.17 MByte
Fairchild
7 Pages / 0.87 MByte
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