TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-252-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.0077 Ω |
Power Dissipation | 3.3 W |
Threshold Voltage | 1.9 V |
Drain to Source Voltage (Vds) | 30 V |
Rise Time | 7 ns |
Input Capacitance (Ciss) | 1230pF @15V(Vds) |
Input Power (Max) | 1.5 W |
Fall Time | 12 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 56 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 6.73 mm |
Size-Width | 6.22 mm |
Size-Height | 2.39 mm |
Operating Temperature | -55℃ ~ 175℃ |
The FDD6690A is a N-channel Logic level MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.
● Low gate charge
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
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