| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.004 Ω |
| Power Dissipation | 227 W |
| Threshold Voltage | 2.5 V |
| Drain to Source Voltage (Vds) | 40 V |
| Rise Time | 78 ns |
| Input Capacitance (Ciss) | 6195pF @25V(Vds) |
| Input Power (Max) | 153 W |
| Fall Time | 15 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 153 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
The FDD8444 is a N-channel MOSFET produced using Fairchild Semiconductor"s PowerTrench® process. It is suitable for electronic transmission, distributed power architecture and VRMs applications.
● Low miller charge
● Low Qrr body diode
● UIS Capability (single pulse and repetitive pulse)
● Qualified to AEC-Q101
ON Semiconductor
9 Pages / 0.48 MByte
ON Semiconductor
9 Pages / 0.5 MByte
ON Semiconductor
7 Pages / 0.87 MByte
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