TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-252-3 |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 19 mΩ |
Polarity | N-Channel |
Power Dissipation | 30 W |
Threshold Voltage | 2.1 V |
Drain to Source Voltage (Vds) | 40 V |
Breakdown Voltage (Drain to Source) | 40 V |
Continuous Drain Current (Ids) | 28.0 A |
Rise Time | 3 ns |
Input Capacitance (Ciss) | 990pF @20V(Vds) |
Input Power (Max) | 30 W |
Fall Time | 2 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 30W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 6.73 mm |
Size-Width | 6.22 mm |
Size-Height | 2.39 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDD8451 is a N-channel MOSFET produced using Fairchild Semiconductor"s proprietary PowerTrench® process. It has been designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, fast switching speed and extremely low RDS (ON).
● Low gate charge
● High performance Trench technology for extremely low RDS (ON)
● Fast switching
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