| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.019 Ω |
| Power Dissipation | 3.1 W |
| Threshold Voltage | 3.1 V |
| Drain to Source Voltage (Vds) | 100 V |
| Rise Time | 3 ns |
| Input Capacitance (Ciss) | 780pF @50V(Vds) |
| Input Power (Max) | 3.1 W |
| Fall Time | 2.9 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 62 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The FDD86102 is a N-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process.
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability in a widely used surface-mount package
● Very low Qg and Qgd compared to competing Trench technologies
● Fast switching speed
● 100% UIL tested
ON Semiconductor
6 Pages / 0.38 MByte
ON Semiconductor
7 Pages / 0.87 MByte
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