| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.041 Ω |
| Power Dissipation | 3.1 W |
| Threshold Voltage | 3.1 V |
| Drain to Source Voltage (Vds) | 150 V |
| Rise Time | 1.8 ns |
| Input Capacitance (Ciss) | 741pF @75V(Vds) |
| Input Power (Max) | 3.1 W |
| Fall Time | 3 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 89 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
The FDD86252 is a N-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance.
● Shielded gate MOSFET technology
● 100% UIL tested
ON Semiconductor
6 Pages / 0.16 MByte
ON Semiconductor
8 Pages / 0.55 MByte
ON Semiconductor
11 Pages / 0.67 MByte
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