| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | -30.0 V |
| Current Rating | -3.00 A |
| Case/Package | SOIC-8 |
| Number of Channels | 1 Channel |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.069 Ω |
| Polarity | P-Channel |
| Power Dissipation | 1.6 W |
| Input Capacitance | 455 pF |
| Gate Charge | 9.30 nC |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Gate to Source) | ±25.0 V |
| Continuous Drain Current (Ids) | 3.00 A |
| Rise Time | 31 ns |
| Input Capacitance (Ciss) | 455pF @10V(Vds) |
| Input Power (Max) | 1.6 W |
| Fall Time | 20 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.6W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 4.9 mm |
| Size-Width | 3.9 mm |
| Size-Height | 1.575 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDFS2P753Z is an integrated P-channel MOSFET and Schottky Diode combines the exceptional performance of Fairchild"s PowerTrench® technology with a very low forward voltage drop Schottky barrier rectifier. It is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low ON-state resistance. The independently connected Schottky diode allows its use in a variety of DC-to-DC converter topologies.
● Schottky and MOSFET incorporated into single power surface-mount SO-8 package
● Electrically independent Schottky and MOSFET pin out for design flexibility
Fairchild
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Fairchild
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