TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 6 Pin |
Voltage Rating (DC) | 20.0 V |
Current Rating | 1.90 A |
Case/Package | SC-70-6 |
Number of Positions | 6 Position |
Drain to Source Resistance (on) (Rds) | 0.115 Ω |
Polarity | N-Channel |
Power Dissipation | 750 mW |
Threshold Voltage | 900 mV |
Input Capacitance | 270 pF |
Gate Charge | 3.00 nC |
Drain to Source Voltage (Vds) | 20 V |
Breakdown Voltage (Drain to Source) | 20.0 V |
Breakdown Voltage (Gate to Source) | ±8.00 V |
Continuous Drain Current (Ids) | 1.90 A |
Rise Time | 9 ns |
Input Capacitance (Ciss) | 270pF @10V(Vds) |
Input Power (Max) | 480 mW |
Fall Time | 2 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 750mW (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 2 mm |
Size-Width | 1.25 mm |
Size-Height | 1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel 2.5V Specified Power Trench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor"s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. Applications • Load switch • Power management • DC/DC converter Features • Low gate charge. • High performance trench technology for extremely low RDS(ON). • Compact industry standard SC70-6 surface mount package.
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