TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 6 Pin |
Voltage Rating (DC) | -20.0 V |
Current Rating | -1.20 A |
Case/Package | SC-70-6 |
Number of Positions | 6 Position |
Drain to Source Resistance (on) (Rds) | 0.135 Ω |
Polarity | P-Channel |
Power Dissipation | 750 mW |
Threshold Voltage | 900 mV |
Input Capacitance | 330 pF |
Gate Charge | 3.30 nC |
Drain to Source Voltage (Vds) | 20 V |
Breakdown Voltage (Drain to Source) | -200 V |
Breakdown Voltage (Gate to Source) | ±8.00 V |
Continuous Drain Current (Ids) | 1.20 A |
Rise Time | 12 ns |
Input Capacitance (Ciss) | 330pF @10V(Vds) |
Input Power (Max) | 480 mW |
Fall Time | 12 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 750mW (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 2 mm |
Size-Width | 1.25 mm |
Size-Height | 1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
P-Channel 2.5V Specified Power Trench MOSFET General Description This P-Channel MOSFET is produced using Fairchild Semiconductor"s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. Applications • Load switch • Power management • DC/DC converter Features • Low gate charge. • High performance trench technology for extremely low RDS(ON). • Compact industry standard SC70-6 surface mount package.
Fairchild
21 Pages / 0.42 MByte
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7 Pages / 0.17 MByte
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1 Pages / 0.06 MByte
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Trans MOSFET P-CH 20V 1.2A 6Pin SC-70 T/R
ON Semiconductor
Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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