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FDG312P
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FDG312P Datasheet PDF - ON Semiconductor

Manufacturer:ON Semiconductor
Category:MOSFETs
Case Package:SC-70-6
Description:Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Documentation:FDG312P Datasheet (5 Pages)Package Outline Dimension on1 Page
Part Numbering System on1 Page
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FDG312P Datasheet PDF (5 Pages)
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FDG312P Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins6 Pin
Case/PackageSC-70-6
Power Dissipation0.75 W
Drain to Source Voltage (Vds)20 V
Rise Time12 ns
Input Capacitance (Ciss)330pF @10V(Vds)
Input Power (Max)480 mW
Fall Time5 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)750 mW
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FDG312P Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTape & Reel (TR)
Size-Length2 mm
Size-Width1.25 mm
Size-Height1 mm
Operating Temperature-55℃ ~ 150℃
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FDG312P Documents

FDG312P Datasheet
ON Semiconductor
5 Pages / 0.07 MByte
FDG312P Features Description Parametrics
ON Semiconductor
5 Pages / 0.19 MByte

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