TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 6 Pin |
Case/Package | SC-70-6 |
Number of Positions | 6 Position |
Drain to Source Resistance (on) (Rds) | 0.057 Ω |
Power Dissipation | 0.42 W |
Threshold Voltage | 700 mV |
Drain to Source Voltage (Vds) | 20 V |
Rise Time | 6.5 ns |
Input Capacitance (Ciss) | 423pF @10V(Vds) |
Input Power (Max) | 380 mW |
Fall Time | 2 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 420 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 2 mm |
Size-Width | 1.25 mm |
Size-Height | 1 mm |
Operating Temperature | -55℃ ~ 150℃ |
The FDG327N is a N-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS (ON) and gate charge (QG) in a small package.
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
● 4.5nC Typical low gate charge
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