| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -600 mA |
| Case/Package | SC-70-6 |
| Number of Channels | 2 Channel |
| Drain to Source Resistance (on) (Rds) | 400 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 0.3 W |
| Input Capacitance | 153 pF |
| Gate Charge | 1.80 nC |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | 20 V |
| Breakdown Voltage (Gate to Source) | ±8.00 V |
| Continuous Drain Current (Ids) | 600 mA |
| Rise Time | 15 ns |
| Input Capacitance (Ciss) | 153pF @10V(Vds) |
| Input Power (Max) | 300 mW |
| Fall Time | 1.6 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2 mm |
| Size-Width | 1.25 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
General Description
●This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
●Features
●• –0.6 A, –20 V. RDS(ON)= 0.40 Ω@ VGS= –4.5 V
● RDS(ON)= 0.55 Ω@ VGS= –2.5 V
● RDS(ON)= 0.80 Ω@ VGS= –1.8 V
●•Low gate charge
●• High performance trench technology for extremely low RDS(ON)
●• Compact industry standard SC70-6 surface mount package
●Applications
●•Battery management
●•Load switch
Fairchild
4 Pages / 0.06 MByte
Fairchild
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P-Channel 1.8V Specified PowerTrench MOSFET
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