| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | -12.0 V |
| Current Rating | -700 mA |
| Case/Package | SC-70-6 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.221 Ω |
| Polarity | P-Channel, Dual P-Channel |
| Power Dissipation | 300 mW |
| Input Capacitance | 146 pF |
| Gate Charge | 1.70 nC |
| Drain to Source Voltage (Vds) | 12 V |
| Breakdown Voltage (Drain to Source) | -12.0 V |
| Breakdown Voltage (Gate to Source) | ±8.00 V |
| Continuous Drain Current (Ids) | -700 mA |
| Rise Time | 13 ns |
| Input Capacitance (Ciss) | 146pF @6V(Vds) |
| Input Power (Max) | 300 mW |
| Fall Time | 2 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 0.3 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2 mm |
| Size-Width | 1.25 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDG6316P is a dual P-channel MOSFET uses advanced low voltage PowerTrench® process. It has been optimized for battery management and load switch applications.
● Low gate charge
● High performance Trench technology for extremely low RDS (ON)
● Compact industry standard surface-mount-package
● ±8V Gate to source voltage
● -0.7A Continuous drain current
● -1.8A Pulsed drain current
Fairchild
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P-Channel 1.8V Specified PowerTrench MOSFET
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Trans MOSFET P-CH 12V 0.7A 6Pin SC-70 T/R
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Trans MOSFET P-CH 12V 0.7A 6Pin SC-70 T/R
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