| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | SC-70-6 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.18 Ω |
| Polarity | N-Channel, P-Channel |
| Power Dissipation | 300 mW |
| Threshold Voltage | 1.1 V |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 0.7A/0.6A |
| Input Capacitance (Ciss) | 113pF @10V(Vds) |
| Input Power (Max) | 300 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 0.3 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2 mm |
| Size-Width | 1.25 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDG6332C_F085 is a N/P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain superior switching performance. This device has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive and packages are impractical. It is suitable for use with DC-to-DC converters, load switch and LCD display inverter applications.
● Low gate charge
● High performance Trench technology for extremely low RDS (ON)
● Small footprint
● Low profile
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