| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | 20.0 V |
| Current Rating | 700 mA |
| Case/Package | SC-70-6 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.18 Ω |
| Polarity | N-Channel, Dual N-Channel |
| Power Dissipation | 300 mW |
| Threshold Voltage | 1.1 V |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | 20.0 V |
| Breakdown Voltage (Gate to Source) | ±12.0 V |
| Continuous Drain Current (Ids) | 700 mA |
| Rise Time | 7 ns |
| Input Capacitance (Ciss) | 113pF @10V(Vds) |
| Input Power (Max) | 300 mW |
| Fall Time | 1.5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 0.3 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2 mm |
| Size-Width | 1.25 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDG6335N is a PowerTrench® dual N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS (ON) and gate charge (QG) in a small package. It is suitable for use with DC-to-DC converters and load switch applications.
● Low gate charge
● High performance Trench technology for extremely low RDS (ON)
● Compact industry standard surface-mount-package
● ±12V Gate to source voltage
● 0.7A Continuous drain current
● 2.1A Pulsed drain current
Fairchild
5 Pages / 0.06 MByte
Fairchild
8 Pages / 0.17 MByte
Fairchild
5 Pages / 0.06 MByte
Fairchild
Trans MOSFET N-CH 20V 0.7A 6Pin SC-70 T/R
ON Semiconductor
Small Signal Field-Effect Transistor, 0.7A I(D), 20V, 2Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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