| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -3.10 A |
| Case/Package | WDFN-6 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.06 Ω |
| Polarity | P-Channel |
| Power Dissipation | 1.4 W |
| Threshold Voltage | 12 V |
| Input Capacitance | 540 pF |
| Gate Charge | 10.0 nC |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Gate to Source) | ±12.0 V |
| Continuous Drain Current (Ids) | 3.10 A |
| Rise Time | 11 ns |
| Input Capacitance (Ciss) | 540pF @10V(Vds) |
| Input Power (Max) | 700 mW |
| Fall Time | 36 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1400 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2 mm |
| Size-Width | 2 mm |
| Size-Height | 0.75 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDMA1029PZ is a dual P-channel PowerTrench® MOSFET designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It has two independent P-channel MOSFETs with low ON-state resistance for minimum conduction losses. When connected in the typical common source configuration, bidirectional current flow is possible. The MicroFET thin package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
● Low profile
● Halogen-free
● ±12V Gate to source voltage
● -3.1A Continuous drain current
● 6A Pulsed drain current
Fairchild
2 Pages / 0.19 MByte
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Trans MOSFET P-CH 20V 3.1A 6Pin MLP EP T/R
ON Semiconductor
Dual MOSFET, Dual P Channel, 3.1A, -20V, 0.06Ω, -1V, 1V
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