| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | VDFN-6 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.037 Ω |
| Power Dissipation | 1.4 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 20 V |
| Input Capacitance (Ciss) | 340pF @10V(Vds) |
| Input Power (Max) | 700 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1400 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDMA1032CZ is a dual N/P-channel PowerTrench® MOSFET designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It has two independent N and P-channel MOSFETs with low ON-state resistance for minimum conduction losses. When connected in the typical common source configuration, bidirectional current flow is possible. The MicroFET thin package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
● Low profile
● Halogen-free
● ±12V Gate to source voltage
● -3.1A Continuous drain current
● 6A Pulsed drain current
ON Semiconductor
9 Pages / 0.34 MByte
ON Semiconductor
6 Pages / 1.68 MByte
Fairchild
Trans MOSFET N/P-CH 20V 3.7A/3.1A 6Pin MLP EP T/R
ON Semiconductor
20V Complementary PowerTrench® MOSFET
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
