| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | 20.0 V |
| Current Rating | 3.70 A |
| Case/Package | MicroFET-6 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.037 Ω |
| Polarity | N-Channel, P-Channel |
| Power Dissipation | 1.4 W |
| Threshold Voltage | 1 V |
| Input Capacitance | 340 pF |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | 20.0 V |
| Breakdown Voltage (Gate to Source) | ±12.0 V |
| Continuous Drain Current (Ids) | 3.70 A |
| Input Capacitance (Ciss) | 340pF @10V(Vds) |
| Input Power (Max) | 700 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2 mm |
| Size-Width | 2 mm |
| Size-Height | 0.75 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDMA1032CZ is a dual N/P-channel PowerTrench® MOSFET designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It has two independent N and P-channel MOSFETs with low ON-state resistance for minimum conduction losses. When connected in the typical common source configuration, bidirectional current flow is possible. The MicroFET thin package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
● Low profile
● Halogen-free
● ±12V Gate to source voltage
● -3.1A Continuous drain current
● 6A Pulsed drain current
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