| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | QFN-6 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.036 Ω |
| Power Dissipation | 2.4 W |
| Drain to Source Voltage (Vds) | 20 V |
| Rise Time | 9 ns |
| Input Capacitance (Ciss) | 1000pF @10V(Vds) |
| Input Power (Max) | 900 mW |
| Fall Time | 25 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.4 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2 mm |
| Size-Width | 2 mm |
| Size-Height | 0.75 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The FDMA291P is a 1.8V specified single P-channel MOSFET produced using Fairchild Semiconductor"s PowerTrench® process. It is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low ON-state resistance. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
● Halogen-free
ON Semiconductor
2 Pages / 0.13 MByte
ON Semiconductor
6 Pages / 0.24 MByte
ON Semiconductor
6 Pages / 0.65 MByte
Fairchild
Small Signal Field-Effect Transistor, 6.6A I(D), 20V, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 2 X 2MM, 0.8MM HEIGHT, ANTIMONY AND HALOGEN FREE, ROHS COMPLIANT, MO-229, MICROFET-6
ON Semiconductor
Trans MOSFET P-CH 20V 6.6A 6-Pin MLP EP T/R
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