TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 6 Pin |
Case/Package | MicroFET-6 |
Number of Positions | 6 Position |
Drain to Source Resistance (on) (Rds) | 0.069 Ω |
Polarity | Dual P-Channel |
Power Dissipation | 1.4 W |
Drain to Source Voltage (Vds) | 30 V |
Continuous Drain Current (Ids) | 3.3A |
Rise Time | 3 ns |
Input Capacitance (Ciss) | 435pF @15V(Vds) |
Input Power (Max) | 700 mW |
Fall Time | 11 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1.4 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 2 mm |
Size-Width | 2 mm |
Size-Height | 0.725 mm |
Operating Temperature | -55℃ ~ 150℃ |
The FDMA3027PZ is a dual P-channel PowerTrench® MOSFET designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It has two independent P-channel MOSFETs with low ON-state resistance for minimum conduction losses. The MicroFET 2x2 thin package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. G-S Zener has been added to enhance ESD voltage level and it is suitable for use with load switch and discrete gate driver applications.
● Low profile
● ±25V Gate to source voltage
● -3.3A Continuous drain current
● -15A Pulsed drain current
Fairchild
10 Pages / 0.52 MByte
Fairchild
11 Pages / 0.56 MByte
Fairchild
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